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| J105/106/107 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number J105 J106 J107 VGS(off) (V) -4.5 to -10 -2 to -6 -0.5 to -4.5 rDS(on) Max (W) 3 6 8 ID(off) Typ (pA) 10 10 10 tON Typ (ns) 14 14 14 FEATURES D D D D D Low On-Resistance: J105 < 3 W Fast Switching--tON: 14 ns Low Leakage: 10 pA Low Capacitance: 20 pF Low Insertion Loss BENEFITS D D D D D Low Error Voltage High-Speed Analog Circuit Performance Negligible "Off-Error," Excellent Accuracy Good Frequency Response Eliminates Additional Buffering APPLICATIONS D D D D D Analog Switches Choppers Sample-and-Hold Normally "On" Switches Current Limiters DESCRIPTION The J105/106/107 are high-performance JFET analog switches designed to offer low on-resistance and fast switching. rDS(on) <3 W is guaranteed for the J105 making this device the lowest of any commercially available JFET. The low cost TO-226AA (TO-92) plastic package is available in a wide range of tape-and-reel options (see Packaging Information). For similar products in TO-206AC (TO-52) packaging, see the U290/291 data sheet. TO-226AA (TO-92) D 1 S 2 G 3 Top View ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Document Number: 70230 S-04028--Rev. D, 04-Jun-01 Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C www.vishay.com 7-1 J105/106/107 Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits J105 J106 J107 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentb Symbol Test Conditions Typa Min Max Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG ID(off) rDS(on) VGS(F) IG = -1 mA , VDS = 0 V VDS = 5 V, ID = 1 mA VDS = 15 V, VGS = 0 V VGS = -15 V, VDS = 0 V TA = 125_C VDG = 10 V, ID = 25 mA VDS = 5 V, VGS = -10 V -35 -25 -4.5 500 -10 -25 -2 200 -3 -3 -6 -25 V -0.5 100 -3 -4.5 mA -0.02 -10 -0.01 0.01 5 nA 3 3 3 Drain Cutoff Current Drain-Source On-Resistance Gate-Source Forward Voltage TA = 125_C VGS = 0 V, ID = 1 mA IG = 1 mA , VDS = 0 V 3 0.7 6 8 W V Dynamic Common-Source Forward Transconductanceb Common-Source Output Conductanceb Drain-Source On-Resistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs gos rds(on) Ciss Crss en VDS = 10 V, ID = 25 mA f = 1 kHz 55 mS 5 3 120 20 3 160 35 6 160 35 8 160 pF 35 nV Hz W VGS = 0 V, ID = 0 mA f = 1 kHz VDS = 0 V, VGS = 0 V f = 1 MHz VDS = 0 V, VGS = -10 V f = 1 MHz VDG = 10 V, ID = 25 mA f = 1 kHz Switching td(on) Turn-On Time tr Turn-Off Time td(off) tf Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. VDD = 1.5 V, VGS(H) = 0 V See Switching Diagram 8 ns 5 9 NVA 6 www.vishay.com 7-2 Document Number: 70230 S-04028--Rev. D, 04-Jun-01 J105/106/107 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage 10 rDS(on) - Drain-Source On-Resistance ( ) rDS @ ID = 10 mA, VGS = 0 V IDSS @ VDS = 10 V, VGS = 0 V IDSS - Saturation Drain Current (mA) 8 1.6 2 .0 rDS(on) - Drain-Source On-Resistance ( ) 20 On-Resistance vs. Drain Current TA = 25_C 16 6 rDS IDSS 1.2 12 VGS(off) = -3 V 4 0.8 8 -5 V 4 -8 V 0 10 100 ID - Drain Current (mA) 1000 2 0.4 0 0 -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V) 0 On-Resistance vs. Temperature 10 rDS(on) - Drain-Source On-Resistance ( ) ID = 10 mA rDS changes X 0.7%/_C 8 ID - Drain Current (mA) 400 500 Output Characteristics VGS(off) = -5 V VGS = 0 V -0.5 V 300 -1.0 V -1.5 V 200 -2.0 V 100 -2.5 V -3.0 V 6 VGS(off) = -3 V -5 V 4 -8 V 2 0 -55 0 -35 -15 5 25 45 65 85 105 125 2 4 6 8 10 TA - Temperature (_C) VDS - Drain-Source Voltage (V) Turn-On Switching 20 tr approximately independent of ID VDD = 1.5 V, RG = 50 W VGS(L) = -10 V Switching Time (ns) Switching Time (ns) Turn-Off Switching td(off) independent of device VGS(off) VDD = 1.5 V, VGS(L) = -10 V 16 tr td(on) @ ID = 30 mA 8 12 td(off) 8 tf 4 VGS(off) = -3 V 4 td(on) @ ID = 10 mA 0 0 -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V) VGS(off) = -8 V 0 0 10 20 30 40 50 ID - Drain Current (mA) Document Number: 70230 S-04028--Rev. D, 04-Jun-01 www.vishay.com 7-3 J105/106/107 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Capacitance vs. Gate-Source Voltage 150 gfs - Forward Transconductance (mS) VDS = 0 V f = 1 MHz 120 200 VGS(off) = -5 V 100 VDS = 10 V f = 1 kHz Transconductance vs. Drain Current TA = -55_C 25_C 10 C (pF) 90 Ciss 60 Crss 30 125_C 0 0 -4 -8 -12 -16 -20 1 1 10 ID - Drain Current (mA) 100 VGS - Gate-Source Voltage (V) Output Conductance vs. Drain Current 20 VGS(off) = -5 V 10 gos - Output Conductance (mS) VDS = 10 V f = 1 kHz 100 Noise Voltage vs. Frequency VDG = 10 V TA = -55_C 25_C 1 125_C en - Noise Voltage (nV Hz ) 10 ID = 10 mA 0.1 1 10 ID - Drain Current (mA) 100 1 10 100 1k f - Frequency (Hz) 10 k 100 k Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage 300 gfs and gos @ VDS = 10 V VGS = 0 V, f = 1 kHz gfs - Forward Transconductance (mS) 260 24 10 nA gos - Output Conductance (mS) os 30 100 nA Gate Leakage Current TA = 125_C 100 mA IGSS @ 125_C IG - Gate Leakage 1 nA 100 mA 100 pA TA = 25_C 25 mA 25 mA 220 gfs gos 18 180 12 140 6 10 pA IGSS @ 25_C 100 0 -2 -4 -6 -8 VGS(off) - Gate-Source Cutoff Voltage (V) 0 -10 1 pA 0 4 8 12 16 20 VDG - Drain-Gate Voltage (V) www.vishay.com 7-4 Document Number: 70230 S-04028--Rev. D, 04-Jun-01 J105/106/107 Vishay Siliconix SWITCHING TIME TEST CIRCUIT J105 VGS(L) RL* ID(on) *Non-inductive -12V 50 W 28 mA VDD J106 -7V 50 W 27 mA J107 -5V 50 W 26 mA VGS(H) RL OUT Input Pulse Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz Sampling Scope Rise Time 0.4 ns Input Resistance 10 MW Input Capacitance 1.5 pF VGS(L) 1 kW VIN Scope 51 W 51 W Document Number: 70230 S-04028--Rev. D, 04-Jun-01 www.vishay.com 7-5 |
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